MRF6S19200HR3 MRF6S19200HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, IDQ
= 1600 mA, 1930-1990 MHz Bandwidth
IMD Symmetry @ 130 W PEP, Pout
where IMD Third Order
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
?
20
?
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
?
50
?
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout
= 56 W Avg.
GF
?
0.6
?
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout
= 130 W CW
Φ
?
1.94
?
°
Average Group Delay @ Pout
= 130 W CW, f = 1960 MHz
Delay
?
2.44
?
ns
Part-to-Part Insertion Phase Variation @ Pout
= 130
W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
?
59.4
?
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
?
0.04
?
dB/°C
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